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L2-80 Measuring parameters FET P2-80.

L2-80

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Measuring parameters of FETs L2-80 (L280, L 2 80, L-2-80, L 280, L-280, L2 80)
 
Measuring parameters of FETs L2-80 is designed for testing static parameters of field-effect transistors.
Applied to the input process control laboratory and workshop conditions.
 
Technical characteristics of the instrument gauges parameters field-effect transistors L2-80:
 
Measuring range:
- The threshold voltage (voltage misfires) - 0.1V-30V;
- Gate leakage current - 0,3 ∙ 10 -12 10 -5 A-A;
- The drain current and residual current flow - 0,3 ∙ 10 -9 A 10 -1 A;
- Pulsed drain current - 0.1 A-30A;
- Characteristics of the slope - 0.1 mS-3000mSm;
- The drain-source resistance of the transistor open - 0.3 ohms-1000 ohms;
Measurement error - 5%;
Consumed by the device measuring the parameters of field-effect transistors L2-80 power - 250V · A.


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