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L2-78 Measuring parameters of low-power field-effect transistors P2-78.

L2-78

34 999 RUB
27 999 UAH
available:
1 piece

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Measuring parameters low-power field-effect transistors L2-78 (L278, L 2 78, L-2-78, L 278, L-278, L2 78)
 
Measuring parameters low-power field-effect transistors L2-78 assigned to the basic static parameters of low-power field-effect transistors to determine the proper operation and suitability for use in different equipment.
It is used in laboratories, shops and repair shops.
Provides a wide range of measurement, high accuracy, close to the precision measurement of semiconductor devices of special equipment, the simplicity and ease of use.
Measuring parameters low-power field-effect transistors L2-78 has a built-in microprocessor.
 
Technical characteristics of the instrument gauges parameters shallow field-effect transistors L2-78:
 
Measuring range:
- 0.1 mS transconductance characteristics, 100mSm;
- The threshold voltage (cutoff voltage) - 0.1V-40V;
- The drain current - 0.1 mA, 100 mA;
- Gate leakage current - 0,3 ∙ 10 -12 10 -3 A-A;
- Leakage current flow - 3 ∙ 10 -10 10 -3 A-A;
Measurement error of the instrument measuring the parameters of low-power field-effect transistors L2-78:
- The steepness of the characteristics - ± 8%;
- Leakage current:
- ± (8 + 2 (Ik / IT))% (up to 10 -7 A);
- ± (4 + (Ik / IT))% (higher than 10 -7 A);
The limits of the instrument setup parameters measuring low-power field-effect transistors L2-78:
- Voltage - 0.1V-30V;
- Current - 5 ∙ 10 -6 A-5 ∙ 10 -2 A;
Consumed by the device measuring the parameters of low-power field-effect transistors L2-78 Power - 80 V ∙ A;
Dimensions - 173X312X328mm;
Weight of the device measuring the parameters of L2-78 low-power field-effect transistors - 10kg.
 


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