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Photodiode UFD24M (UFD-24M, UFD 24M)
Photodiode sensors UFD24M applied near-infrared radiation research.
Product Specifications photodiodes UFD24M:
The area of the photosensitive element - 0.44 mm 2;
Mode Products photodiode UFD24M - photodiode;
The bias voltage - no more than 10V;
Dark current for each PSEs Usm = 10V - no more 5mkA;
Field of the spectral sensitivity of the photodiode products UFD24M - 0.38 mm-1, 1 mm;
Monochromatic current sensitivity when applying voltage with λ = 0,63 m, Usm = 10V - not less than 0.3 A / W;
Container products for the photodiode UFD24M at Usm = 10V - no more than 10 pF;
The silicon photodiode is a singleton;
Hermetically sealed;
Housing items photodiode UFD24M --metal;
Operating temperature range - from -50 º C to 65 º C;
The relative humidity at 35 º C - 98%;
The failure rate of products photodiode UFD24M - no more than 5 ∙ 10 -6 h -1 for 5000 hours of use with confidence 0.6;
90% HYDRATED shelf in the equipment - not less than 15 years;
The manufacturer guarantees the product quality photodiode UFD24M technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.

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