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UFD16 UFD16 photodiode.

UFD16

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Photodiode UFD16 (UFD-16, UFD 16)
 
Photodiode sensors UFD16 applied near-infrared radiation.
 
Product Specifications photodiodes UFD16:
 
The area of the photosensitive element - 86.5 mm 2;
Mode Products photodiode UFD16 - photodiode;
The bias voltage - no more than 2C;
Dark current for each PSEs Usm = 2B - no more than 1.0 mA;
Dark current security ring at Usm = 2B - no more 100mkA;
Field of the spectral sensitivity of the photodiode UFD16 products - 0.4 mm-1, 1 mm;
Monochromatic current sensitivity when applying voltage with λ = 1,06 m, Usm = 2B - not less than 0.15 A / W;
Container products for the photodiode UFD16 at Usm = 2B - no more than 300pF;
The silicon photodiode is a singleton;
Hermetically sealed;
Housing items photodiode UFD16 --metal;
Operating temperature range - from -60 º C to 85 º C;
The relative humidity at 40 º C - 98%;
The failure rate of products photodiode UFD16 - no more than 5 ∙ 10 -6 h -1 for 5000 hours of use with confidence 0.6;
90% HYDRATED shelf in the equipment - not less than 12 years;
The manufacturer guarantees the product quality photodiode UFD16 technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.


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