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UFD15M

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Photodiode UFD15M (UFD-15M, UFD 15M)
 
Photodiode sensors UFD15M applied near-infrared radiation.
 
Product Specifications photodiodes UFD15M:
 
The area of the photosensitive element - 48.6 mm 2;
Mode Products photodiode UFD15M - photodiode;
The bias voltage - no more than 135V;
Dark current for each PSEs Usm = 135B - not more than 0.8 mA;
Dark current security ring at Usm = 135B - no more 100mkA;
Field of the spectral sensitivity of the photodiode UFD15M products - 0.4 mm-1, 1 mm;
Monochromatic current sensitivity when applying voltage with λ = 1,06 m, Usm = 135B - not less than 0.2 A / W;
Container products for the photodiode UFD15M at Usm = 135B - no more than 200pF;
Silicon radial four-sectored photodiode;
Hermetically sealed;
Housing items photodiode UFD15M --metal;
Operating temperature range - from -60 º C to 85 º C;
The relative humidity at 40 º C - 98%;
The failure rate of products photodiode UFD15M - no more than 5 ∙ 10 -6 h -1 for 5000 hours of use with confidence 0.6;
90% HYDRATED shelf in the equipment - not less than 15 years;
The manufacturer guarantees the product quality photodiode UFD15M technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.


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