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L2-69

99 999 RUB
40 000 UAH
available:
1 piece

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Measuring parameters of high-power transistors and diodes, L2-69 (L269, L 2 69, L-2-69, L 269, L-269, L2 69)
 
Measuring parameters of high-power transistors and diodes, L2-69 is designed to measure and control static parameters of power transistors and diodes.
Applied to the input process control laboratory and workshop conditions.
Measuring parameters of high-power transistors and diodes, L2-69 can operate as a standalone unit or as part of mnogopostovoy measurement system with computer-controlled by the CPC.
Replaces A2-42 instrument in comparison with which has extended the limits of measurement, the higher voltage and current regime, the possibility of measuring the reverse current and forward voltage of diodes, improved performance measurement, digital display, built-in automation, the ability to connect to the CPC.
 
Technical characteristics of the instrument measuring parameters of high-power transistors and diodes, L2-69:
 
Measuring range:
- Statistics of the transfer current h21e + I5 - 9990 Ikbo reverse currents, Iebo. initial current Ik weight of transistors;
- The reverse current of diodes - 10 -7 A 10 -1 A;
- Saturation voltage Ubenas, Ukenach forward voltage - 0.05V-10V;
Measurement limits the absolute value of current transfer | h21e | 1 instrument measuring parameters of high-power transistors and diodes, L2-69 - 32;
Measurement error - 5%;
Regime voltage - 0.5V-200V;
Regime current device measuring parameters of high-power transistors and diodes, L2-69 - 0.1 A-50A;
Power requirements - 300V · A;
Dimensions - 480X488X175mm (2 blocks);
Weight of the device measuring the parameters of power transistors and diodes, L2-69 - 45kg.

Photos: L2-69

L2-69 measuring image.
L2-69 measuring image.
L2-69 front view.
L2-69 front view.
L2-69 side view.
L2-69 side view.
L2-69 rear view.
L2-69 rear view.
L2-69 overhead view.
L2-69 overhead view.
L2-69 bottom view.
L2-69 bottom view.


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