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UFD25M

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Photodiode UFD25M (UFD-25M, UFD 25M)
 
Photodiode sensors UFD25M applied near-infrared radiation.
 
Product Specifications photodiodes UFD25M:
 
The area of the photosensitive element - 2.25 mm 2;
Mode Products photodiode UFD25M - photovoltaic;
The bias voltage - less than 10 mV;
Dark current for each PSEs Usm = 10 mV - less than 0.4 mA;
Dark current for each PSEs Usm = 10 mV - less than 500mkA;
Field of the spectral sensitivity of the photodiode products UFD25M - 0.38 mm-1, 0mkm;
Monochromatic current sensitivity when applying voltage with λ = 0,85 m, = 10 mV Usm - not less than 0.38 A / W;
Capacity products photodiode UFD25M - no more than 90pF;
The silicon photodiode is a singleton;
Hermetically sealed;
Housing items photodiode UFD25M --metal;
Operating temperature range - from -60 º C to 105 º C;
The relative humidity at 35 º C - 98%;
The failure rate of products photodiode UFD25M - no more than 5 ∙ 10 -6 h -1 for 5000 hours of use with confidence 0.6;
90% HYDRATED shelf in the equipment - not less than 12 years;
The manufacturer guarantees the product quality photodiode UFD25M technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.


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