Datasheets and radio parts >> photodiodes


(for order is possible effectively delivery of any quantity)
Photodiode UFD14M (UFD-14M, UFD 14M)
Photodiode sensors UFD14M applied near-infrared radiation.
Product Specifications photodiodes UFD14M:
The area of the photosensitive element - 37mm 2;
Mode Products photodiode UFD14M - photodiode;
The bias voltage - no more than 2C;
Dark current for each PSEs Usm = 2B - less than 1 uA;
Dark current security ring at Usm = 2B - no more 100mkA;
Field of the spectral sensitivity of the photodiode UFD14M products - 0.4 mm-1, 1 mm;
Monochromatic current sensitivity when applying voltage with λ = 1,06 m, Usm = 2B - not less than 0.15 A / W;
Container products for the photodiode UFD14M at Usm = 2B - no more than 200pF;
Silicon radial four-sectored photodiode;
Hermetically sealed;
Housing items photodiode UFD14M --metal;
Operating temperature range - from -10 º C to 85 º C;
The relative humidity at 40 º C - 98%;
The failure rate of products photodiode UFD14M - no more than 5 ∙ 10 -6 h -1 for 5000 hours of use with confidence 0.6;
90% HYDRATED shelf in the equipment - not less than 15 years;
The manufacturer guarantees the product quality photodiode UFD14M technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.

Яндекс цитирования