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UFD14M

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Photodiode UFD14M (UFD-14M, UFD 14M)
 
Photodiode sensors UFD14M applied near-infrared radiation.
 
Product Specifications photodiodes UFD14M:
 
The area of the photosensitive element - 37mm 2;
Mode Products photodiode UFD14M - photodiode;
The bias voltage - no more than 2C;
Dark current for each PSEs Usm = 2B - less than 1 uA;
Dark current security ring at Usm = 2B - no more 100mkA;
Field of the spectral sensitivity of the photodiode UFD14M products - 0.4 mm-1, 1 mm;
Monochromatic current sensitivity when applying voltage with λ = 1,06 m, Usm = 2B - not less than 0.15 A / W;
Container products for the photodiode UFD14M at Usm = 2B - no more than 200pF;
Silicon radial four-sectored photodiode;
Hermetically sealed;
Housing items photodiode UFD14M --metal;
Operating temperature range - from -10 º C to 85 º C;
The relative humidity at 40 º C - 98%;
The failure rate of products photodiode UFD14M - no more than 5 ∙ 10 -6 h -1 for 5000 hours of use with confidence 0.6;
90% HYDRATED shelf in the equipment - not less than 15 years;
The manufacturer guarantees the product quality photodiode UFD14M technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.


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