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Datasheets and radio parts >> photodiodes

UFD13M UFD13M photodiode.


(for order is possible effectively delivery of any quantity)
Photodiode UFD13M (UFD-13M, UFD 13M)
Photodiode sensors UFD13M applied near-infrared radiation.
Product Specifications photodiodes UFD13M:
The area of the photosensitive element - 37mm 2;
Mode Products photodiode UFD13M - photodiode;
The bias voltage - no more than 135V;
Dark current for each PSEs Usm = 135B - no more 3mkA;
Dark current security ring at Usm = 135B - no more 100mkA;
Field of the spectral sensitivity of the photodiode UFD13M products - 0.4 mm-1, 1 mm;
Monochromatic current sensitivity when applying voltage with λ = 1,06 m, Usm = 135B - not less than 0.25 A / W;
Container products for the photodiode UFD13M at Usm = 135B - no more than 14pF;
Silicon radial four-sectored photodiode;
Hermetically sealed;
Housing items photodiode UFD13M - metal;
The minimum working hours - 5000 hours;
The minimum shelf life - 10 years;
The manufacturer guarantees the product quality photodiode UFD13M technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.

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