Datasheets and radio parts >> photodiodes

UFD13M UFD13M photodiode.


For order is possible effectively delivery of any quantity.
Photodiode UFD13M (UFD-13M, UFD 13M)
Photodiode sensors UFD13M applied near-infrared radiation.
Product Specifications photodiodes UFD13M:
The area of the photosensitive element - 37mm 2;
Mode Products photodiode UFD13M - photodiode;
The bias voltage - no more than 135V;
Dark current for each PSEs Usm = 135B - no more 3mkA;
Dark current security ring at Usm = 135B - no more 100mkA;
Field of the spectral sensitivity of the photodiode UFD13M products - 0.4 mm-1, 1 mm;
Monochromatic current sensitivity when applying voltage with λ = 1,06 m, Usm = 135B - not less than 0.25 A / W;
Container products for the photodiode UFD13M at Usm = 135B - no more than 14pF;
Silicon radial four-sectored photodiode;
Hermetically sealed;
Housing items photodiode UFD13M - metal;
The minimum working hours - 5000 hours;
The minimum shelf life - 10 years;
The manufacturer guarantees the product quality photodiode UFD13M technical requirements specifications, subject to the consumer the terms and conditions of storage, transportation, installation, operation, established specifications and operational documentation.

Яндекс цитирования