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L2-70

69 999 RUB
28 000 UAH
available:
3 pieces

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Measuring parameters of high-power transistors and diodes, L2-70 (L270, L 2 70, L-2-70, L 270, L-270, L2 70)
 
Measuring parameters of high-power transistors and diodes, L2-70 is designed to measure and control static parameters of power transistors and diodes.
Applied to the input process control laboratory and workshop conditions.
Measuring parameters of high-power transistors and diodes, L2-70 can operate as a standalone unit or as part of mnogopostovoy measurement system with computer-controlled by the CPC.
Replaces the device A2-22 / 1 compared with that has extended beyond measure, higher voltages and currents regime, the possibility of measuring the reverse current and forward voltage of diodes, improved performance measurement, digital display, built-in automation, the ability to connect to the CPC.
 
Technical characteristics of the instrument measuring parameters of high-power transistors and diodes, L2-70:
 
Measuring range:
- Statistics of the transfer current h21e + I - 5-9990;
- Small-signal current transfer ratio h21e + I - 2-9990;
- Reverse currents Ikbo, Iebo, Iobr Ikenach initial current of transistors - 10 -9 10 -3 A-A;
- Saturation voltage Ubenas, Ukenach forward voltage - 0.05V-10V;
- The reverse current of diodes - 10 -9 10 -3 A-A;
Accuracy of measurement device measuring parameters of high-power transistors and diodes, L2-70 - 5%;
Regime voltage - 0.5 V-199, 9B;
Regime current device measuring parameters of high-power transistors and diodes, L2-70 - 0.1 mA, 199, 9mA;
Power consumption - 250 · A;
Dimensions - 480X488X175mm (2 blocks);
Weight of the device measuring the parameters of power transistors and diodes, L2-70 - 45kg.

Photos: L2-70

L2-70 measuring image.
L2-70 measuring image.
L2-70 front view.
L2-70 front view.
L2-70 side view.
L2-70 side view.
L2-70 rear view.
L2-70 rear view.
L2-70 overhead view.
L2-70 overhead view.
L2-70 bottom view.
L2-70 bottom view.


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