Radiometric devices >> radio component testers

L2-68

34 999 RUB   |   13 999 UAH   |  available: 2 pieces
L2-68 measuring image.
Measuring parameters low-power RF transistors L2-68 (L268, L 2 68, L-2-68, L 268, L-268, L2 68)
Designed to measure the modulus of the transfer of high-current low-power transistors;
Measurement frequency - 100MHz, 300MHz;
Measurement limits the absolute value of current transfer - 1-32;
Measurement error - 10%;
Modal voltage - 1 V-29, 9B;
Regime current - 0.5 mA-49, 9mA.

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L2-69

99 999 RUB   |   40 000 UAH   |  available: 1 piece
L2-69 measuring image.
Measuring parameters of high-power transistors and diodes, L2-69 (L269, L 2 69, L-2-69, L 269, L-269, L2 69)
Designed to measure and control static parameters of power transistors and diodes;
Measuring range:
- Statistics of the transfer current h21e + I5 - 9990 Ikbo reverse currents, Iebo. initial current Ik weight of transistors;
- The reverse current of diodes - 10 -7A 10 -1 A;
- Saturation voltage Ubenas, Ukenach forward voltage - 0.05V-10V;
Measurement limits the absolute value of current transfer | h21e | 1 - 32;
Measurement error - 5%.

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L2-70

69 999 RUB   |   28 000 UAH   |  available: 3 pieces
L2-70 measuring image.
Measuring parameters of high-power transistors and diodes, L2-70 (L270, L 2 70, L-2-70, L 270, L-270, L2 70)
Designed to measure and control static parameters of power transistors and diodes;
Measuring range:
- Statistics of the transfer current h21e + I - 5-9990;
- Small-signal current transfer ratio h21e + I - 2-9990;
- Reverse currents Ikbo, Iebo, Iobr Ikenach initial current of transistors - 10 -9 10 -3A-A;
- Saturation voltage Ubenas, Ukenach forward voltage - 0.05V-10V;
- The reverse current of diodes - 10 -910 -3 A-A;
Measurement error - 5%.

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Л2-71

Л2-71 измеритель параметров предназначен для измерения основных параметров и разбраковки по ним операционных усилителей, компараторов напряжения, усилителей низкой частоты, стабилизаторов напряжения и цифроаналоговых преобразователей при входном и технологическом контроле.

Ток потребления обеих полярностей - от 0,1 мА до 100 мА.

Напряжение смещения - от 0,02 мВ до 100 мВ.


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L2-72

Measuring parameters of transistors L2-72 (L272, L 2 72, L-2-72, L 272, L-272, L2 72)
Designed for measuring and grading of the static bipolar transistor current transfer ratio and the return current collector.

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L2-76

34 999 RUB   |   14 000 UAH   |  available: 6 pieces
L2-76 device image.
Measuring parameters of transistors. Zener diodes and L2-76 (L276, L 2 76, L-2-76, L 276, L-276, L2 76)
Designed to assess the validity of a wide range of bipolar transistors, small, medium and high power diodes and diodes by examining the basic static parameters;
Measuring range
- The reverse collector current of transistors and diodes, the reverse current (Ikbo, Iobr) - 10 -8 A 10 -2A;
- Forward voltage diodes (Ubr) - 0.1V-5V;
- Zener voltage stabilization (Ustab) - 3V-180V;
Measurement error - 5%;
Measurement modes - Uk, UP 100V-400V, Ipr 2 ∙ 10 -4 A-1A, Istab 2 ∙ 10 -4A-1A (at Ustab <30V) and 10 -3 10 -2A-A (at Ustab> 30V .)

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L2-77

19 999 RUB   |   8 000 UAH   |  available: 1 piece
L2-77 device image.
Measuring parameters low-power transistors and diodes, L2-77 (L277, L 2 77, L-2-77, L 277, L-277, L2 77)
Assigned to the basic parameters of low-power bipolar transistors, diodes and Zener wide range;
Measuring range:
- The reverse currents of diodes, transistors and the collectors - 10 -810 -3 A-A;
- Current transfer ratio of transistors - 5-2000;
- Forward voltage diode - 0.1V-5V;
- Zener voltage stabilization - 3V-150V;
Measurement error - 5%;
Modes of measurement:
- Transistors - Ie = 10mA, Uk = 10V;
- Diodes - If = 5mA-300mA, Uobr = 10V-400V.

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L2-78

34 999 RUB   |   27 999 UAH   |  available: 1 piece
Measuring parameters of low-power field-effect transistors P2-78.
Measuring parameters low-power field-effect transistors L2-78 (L278, L 2 78, L-2-78, L 278, L-278, L2 78)
Assigned to the basic static parameters of low-power field-effect transistors to determine the proper operation and suitability for use in different equipment.

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L2-80

available: 1 piece
Measuring parameters FET P2-80.
Measuring parameters of FETs L2-80 (L280, L 2 80, L-2-80, L 280, L-280, L2 80)
Designed to test the static parameters of field-effect transistors;
Measuring range:
- The threshold voltage (voltage misfires) - 0.1V-30V;
- Gate leakage current - 0,3 ∙ 10 -12 10 -5A-A;
- The drain current and residual current flow - 0,3 ∙ 10 -9 A 10 -1A;
- Pulsed drain current - 0.1 A-30A;
- Characteristics of the slope - 0.1 mS-3000mSm;
- The drain-source resistance of the transistor open - 0.3 ohms-1000 ohms;
Measurement error - 5%.

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L3-3

19 999 RUB   |   8 000 UAH   |  available: 8 pieces
L3-3 device image.

Measuring the parameters of electron tubes L3-3 (L33, L3 3)
Desined to measure the main electrical parameters of vacuum tubes, as well as to remove the static characteristics.
Supplies to the electrodes of the test tubes following voltages:
on the heat - from 1 to 14 V at 1.2 A;
on the first mesh - 0 -0.5 to 65, and the fixed voltage -100 V;
the grid 2 - from 10 to 300 V at 15 mA;
the anode - from 5 to 300 V at 100 mA;
AC voltage rectifier tubes for the test - 2h350, 2x400, 2x500 In


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Л2-23ИППП-3Л2-71
Л2-22ИППП-1/1ИППП-1/2
ИППП-1/3ИППП-1/4ИППП-1/5
ИППП-1/6Л2-47Л2-48
Л2-22/1ИЦИСЛ2-28
Л2-31Л2-32Л2-34
Л2-26Л2-65Л4-4
L1-3L2-38L2-41
L2-54L2-56L2-56A
L2-60L2-68L2-69
L2-70L2-72L2-76
L2-77L2-78L2-80
L3-3ИППП-1Л2-42
Л2-43Л2-46 


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